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FGPF70N30T - 70A PDP IGBT

Description

Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

PD TJ Tstg TL Description Collector-Em

Features

  • High current capability.
  • Low saturation voltage: VCE(sat) =1.5V @ IC = 40A.
  • High input impedance.
  • Fast switching.
  • RoHS complaint.

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Full PDF Text Transcription

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FGPF70N30T 300V, 70A PDP Trench IGBT FGPF70N30T 300V, 70A PDP IGBT Features • High current capability • Low saturation voltage: VCE(sat) =1.5V @ IC = 40A • High input impedance • Fast switching • RoHS complaint Application . PDP System June 2007 tm General Description Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. GC E TO-220F Absolute Maximum Ratings Symbol VCES VGES IC pulse(1)* PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation @ TC = 25oC @ TC = 25oC @ TC = 100oC Operating Junction Temperature Storage Temperature Range Maximum Lead Temp.
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