FGS15N40L - Electrical Characteristics of IGBT

Fairchild (now onsemi)

General Description

Insulated Gate Bipolar Transistors(IGBTs) with trench gate structure have superior performance in conductance and switching to planar gate structure and also have wide noise immunity.

Key Features

High Input Impedance.
High Peak Current Capability (130A).
Easy Gate Drive.

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FGS15N40L electrical characteristics of igbt by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	FGS15N40L
Manufacturer	Fairchild (now onsemi)
File Size	204.73 KB
Description	Electrical Characteristics of IGBT
Datasheet	FGS15N40L Datasheet

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FGS15N40L September 2001 IGBT FGS15N40L General Description Insulated Gate Bipolar Transistors(IGBTs) with trench gate structure have superior performance in conductance and switching to planar gate structure and also have wide noise immunity. These devices are well suitable for strobe application Features • High Input Impedance • High Peak Current Capability (130A) • Easy Gate Drive Application • Strobe Flash C C C C G E C E E G E 8-SOP Absolute Maximum Ratings Symbol VCES VGES ICM (1) PC TJ Tstg TL TC = 25°C unless otherrwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp.