FGW15N40A Datasheet PDF | Fairchild Semiconductor

Fairchild Semiconductor FGW15N40A

This N-Channel IGBT is a MOS gated, logic level device which has been especially tailored for camera flash applications where board space is a premium. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where bigger, more expensive packages are impractical.

Part No.	FGW15N40A
Datasheet	FGW15N40A Download
Manufacturer	Fairchild Semiconductor
Description	Strobe Flash N-Channel Logic Level IGBT
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FEATURES

VCE(SAT) = 4.4V at IC=150A tfl = 1.1µs, td(OFF)I = 0.46µs 2kV ESD Protected High Peak Current Density TSSOP - 8 package, small footprint, low profile (1mm thick)

GENERAL DESCRIPTION

The gate is ESD protected with a zener diode.

APPLICATIONS

Camera Strobe Internal Diagram 4 E E E G C C C C Pin 1 5 6 7 8 3 2 1 TSSOP-8 ©2005 Fairchild Semiconductor Corporation FGW15N40A Rev. A2 1 Free Datasheet FGW15N40A Strobe Flash N-Channel Logic Level IGBT Device

MAXIMUM RATINGS

TA = 25°C unless otherwise noted Symbol BVCES IC ICP VGES VGEP PD TJ TSTG ESD Parameter Collector to Emitter Breakdown Voltage Collector Current Continuous(DC) Collector Current Pulsed(100µs) Gate to Emitter Voltage Continuous(DC) Gate to Emitter Voltage Pulsed Power Dissipation Total TC = 25°C Operating Junction Temperature Range Storage Junction Temperature Range Electrostatic Discharge Voltage at 100pF, 1500Ω Ratings 400 8 150 ±6 ±8 1.25 -40 to 150 -40 to 150 2 Units V A A V V W °C °C kV Package Marking...