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FJAF4310 - NPN Epitaxial Silicon Transistor

Key Features

  • Audio Power Amplifier.
  • High Current Capability : IC=10A.
  • High Power Dissipation.
  • Wide S. O. A.
  • Complement to FJAF4210 Absolute Maximum Ratings.
  • TA=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC RθJC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Base Current (DC) Collector Dissipation (TC=25°C) Junction to Case Junction Temperature Storage Temperature 1 TO-3PF 1.Base 2.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FJAF4310 — NPN Epitaxial Silicon Transistor October 2009 FJAF4310 NPN Epitaxial Silicon Transistor Features • Audio Power Amplifier • High Current Capability : IC=10A • High Power Dissipation • Wide S.O.A • Complement to FJAF4210 Absolute Maximum Ratings* TA=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC RθJC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Base Current (DC) Collector Dissipation (TC=25°C) Junction to Case Junction Temperature Storage Temperature 1 TO-3PF 1.Base 2.Collector 3.Emitter Value 200 140 6 10 1.5 80 1.