FJB3307D - High Voltage Fast Switching NPN Power Transistor
Fairchild (now onsemi)
Key Features
Built-in Diode between Collector and Emitter.
Suitable for Electronic Ballast and Switch Mode Power Supplies
Internal Schematic Diagram C
1 D2-PAK 1.Base 2.Collector 3.Emitter
B E
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP.
Collector Current (Pulse)
IB Base Current (DC)
IBP.
Full PDF Text Transcription for FJB3307D (Reference)
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FJB3307D. For precise diagrams, and layout, please refer to the original PDF.
FJB3307D — High Voltage Fast Switching NPN Power Transistor March 2012 FJB3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collect...
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itching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram C 1 D2-PAK 1.Base 2.Collector 3.
FJB3307D Datasheet
