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FJBE2150D - NPN Silicon Transistor

General Description

The FJBE2150D is a low-cost, high-performance power switch designed to be used in an ESBC™ configuration in applications such as: power supplies, motor drivers, smart grid, or ignition switches.

Key Features

  • (FDC655 MOSFET) VCS(ON) 0.131 V IC 0.5 A Equiv. RCS(ON) 0.261 Ω(1).
  • Low Equivalent On Resistance.
  • Very Fast Switch: 150 kHz.
  • Squared RBSOA: Up to 1500 V.
  • Avalanche Rated.
  • Low Driving Capacitance, No Miller Capacitance Typ. 12 pF Capacitance at 200 V).
  • Low Switching Losses.
  • Reliable HV Switch: No False Triggering due to High dv/dt Transients.

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Full PDF Text Transcription for FJBE2150D (Reference)

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FJBE2150D — ESBC™ Rated NPN Silicon Transistor January 2016 FJBE2150D ESBC™ Rated NPN Silicon Transistor ESBC Features (FDC655 MOSFET) VCS(ON) 0.131 V IC 0.5 A Equiv. RCS...

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stor ESBC Features (FDC655 MOSFET) VCS(ON) 0.131 V IC 0.5 A Equiv. RCS(ON) 0.261 Ω(1) • Low Equivalent On Resistance • Very Fast Switch: 150 kHz • Squared RBSOA: Up to 1500 V • Avalanche Rated • Low Driving Capacitance, No Miller Capacitance Typ.

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