FJD3305H1 Description
FJD3305H1 NPN Silicon Transistor April 2009 FJD3305H1 NPN Silicon Transistor High Voltage Switch Mode Application Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast Application 1 DPAK 1. Tc = 25°C TJ TSTG Junction Temperature Storage Temperature These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Pulse Width≤300µs, Duty Cycle≤2%.