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FJD3305H1 — NPN Silicon Transistor
April 2009
FJD3305H1 NPN Silicon Transistor
High Voltage Switch Mode Application
• Fast Speed Switching • Wide Safe Operating Area • Suitable for Electronic Ballast Application
1
DPAK
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings *
Symbol
VCBO VCEO VEBO IC ICP IB
TC=25°C unless otherwise noted
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current
Value
700 400 9 4 8 2 1.1 50 150 -65 ~ 150
Units
V V V A A A W W °C °C
PC Collector Dissipation, Ta = 25°C www.DataSheet4U.com Tc = 25°C TJ TSTG Junction Temperature Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
FJD3305H1 Datasheet
