Fairchild Semiconductor FJN5471
NPN Epitaxial Silicon Transistor
| Part No. | FJN5471 |
|---|---|
| Datasheet | FJN5471 Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | NPN Epitaxial Silicon Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Ratings 40 20 7 5 0.75 150 -55 ~ 150 Units V V V A W °C °CELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted Symbol BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (sat) fT Cob Parameter Collector-Emitter Voltage Emitter Base Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Band Width Product Collector Output Capacitance Test Condition IC=1mA, IB=0 IC=100µA, IC=0 VCB=10V, IE=0 VEB=7V, IC=0 VCE=2V, IC=0.5A IC=3A, IB=0.1A IC=3A, IB=0.1A VCE=6V, IC=50mA VCB=20V, IE=0, f=1MHz 150 25 700 1000 0.5 1.5 V V MHz pF Min. 20 7 0.1 0.1 Typ. Max. Units V V µA µA Thermal Characteristics TC=25°C unless otherwise noted Symbol RθjA Parameter Thermal Resistance, Junction to Ambient Max 165 Units °C/W ©2002 Fairchild Semiconductor Corporation Rev.
