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FJN5471 - NPN Epitaxial Silicon Transistor

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FJN5471 FJN5471 For Output Amplifier of Electronic Flash Unit • High DC Currrent Gain • Low Collector-Emitter Saturation Voltage • High Performance at Low Supply Voltage 1 TO-92 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Ratings 40 20 7 5 0.