Fairchild Semiconductor FJNS3209R
NPN Epitaxial Silicon Transistor
| Part No. | FJNS3209R |
|---|---|
| Datasheet | FJNS3209R Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | NPN Epitaxial Silicon Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 40 40 5 100 300 150 -55 ~ 150 Units V V V mA mW °C °C E B R Equivalent Circuit CELECTRICAL CHARACTERISTICS
Ta=25°C unless otherwise noted Symbol BVCBO BVCEO ICBO hFE VCE (sat) Cob fT R Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Input Resistor Test Condition IC=100µA, IE=0 IE=1mA, IB=0 VCB=30V, IE=0 VCE=5V, IC=1mA IC=10mA, IB=1mA VCB=10V, IE=0 f=1MHz VCE=10V, IC=5mA 3.2 3.70 250 4.7 6.2 100 Min. 40 40 0.1 600 0.3 V pF MHz KΩ Typ. Max. Units V V µA ©2002 Fairchild Semiconductor Corporation Rev. A, August 2002 FJNS3209R Typical Characteristics 10000 1000 VCE(sat)[mV...
