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FJP2160D - NPN Silicon Transistor

General Description

The FJP2160D is a low-cost, high performance power switch designed to provide the best performance when used in an ESBCTM configuration in applications such as: power supplies, motor drivers, Smart Grid, or ignition switches.

Key Features

  • (FDC655 MOSFET) VCS(ON) 0.131 V IC 0.5 A Equiv RCS(ON) 0.261 Ω ∗.
  • Low Equivalent On Resistance.
  • Very Fast Switch : 150KHz.
  • Squared RBSOA : Up to 1600Volts.
  • Avalanche Rated.
  • Low Driving Capacitance, no Miller Capacitance (Typ 12pF Cap @ 200volts).
  • Low Switching Losses.
  • Reliable HV switch : No False Triggering due to High dv/dt Transients.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FJP2160D — ESBCTTMM Rated NPN Silicon Transistor FJP2160D ESBCTM Rated NPN Silicon Transistor May 2012 Applications • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application (ESBCTM) • Smart Meter, Smart Breakers, HV Industrial Power Supplies • Motor Driver and Ignition Driver ESBC Features (FDC655 MOSFET) VCS(ON) 0.131 V IC 0.5 A Equiv RCS(ON) 0.261 Ω ∗ • Low Equivalent On Resistance • Very Fast Switch : 150KHz • Squared RBSOA : Up to 1600Volts • Avalanche Rated • Low Driving Capacitance, no Miller Capacitance (Typ 12pF Cap @ 200volts) • Low Switching Losses • Reliable HV switch : No False Triggering due to High dv/dt Transients.