FJP3835
Power Amplifier
- High Current Capability : IC=8A
- High Power Dissipation
- Wide S.O.A
TO-220 2.Collector 3.Emitter
1.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO VCEO VEBO IC ICP PC TJ TSTG
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature
Value 200 120 8 8 16 50 150
- 55 ~ 150
Units V V V A A W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO h FE VCE(sat) VBE(sat) f T Cob t ON t F t STG
- Pulse Test : PW=20µs
Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current
- DC
Test Condition IC=5m A, IE=0 IC=10m A, RBE=∞ IE=5m A, IC=0 VCB=80V, IE=0 VEB=4V, IC=0 VCE=4V, IC=3A IC=3A, IB=0.3A IC=3A, IB=0.3A...
