FJP5304D - NPN Silicon Transistor

Fairchild (now onsemi)

Datasheet Details

Part number	FJP5304D
Manufacturer	Fairchild (now onsemi)
File Size	207.75 KB
Description	NPN Silicon Transistor
Datasheet	FJP5304D Datasheet

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FJP5304D — NPN Silicon Transistor FJP5304D NPN Silicon Transistor High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free Wheeling diodeSuitable for Electronic Ballast Application • Suitable for Electronic Ballast Application • Small Variance in Storage Time July 2008 Equivalent Circuit C B 1 TO-220 E 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current (DC) ICP * Collector Current (Pulse) IB Base Current (DC) IBP * Base Current (Pulse) PC Collector Dissipation (TC=25°C) TSTG Storage Temperature * Pulse Test Pulse Width = 5ms, Duty Cycle ≥ 1.