FJP5304D Description
Units 700 V 400 V 12 V 100 mA 250 mA 100 mA © 2008 Fairchild Semiconductor Corporation FJP5304D Rev. FJP5304D NPN Silicon Transistor hFE VCE(sat) DC Current Gain Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage Vf Internal Diode Forward Voltage Drop Inductive Load Switching (VCC = 200V) tstg Storage Time tf Fall Time Resistive Load Switching (VCC = 250V) tstg Storage Time tf Fall Time...