FJP5304D - NPN Silicon Transistor

Fairchild Semiconductor

Datasheet Details

Part number	FJP5304D
Manufacturer	Fairchild Semiconductor
File Size	207.75 KB
Description	NPN Silicon Transistor
Datasheet	FJP5304D Datasheet
Additional preview pages of the FJP5304D datasheet.

📁 Similar Datasheet

FJP5027 - NPN Transistor (INCHANGE)
FJP13007 - High Voltage Fast-Switching NPN Power Transistor (ON Semiconductor)
FJP13009 - Silicon NPN Power Transistor (INCHANGE)
FJP3305 - Silicon NPN Transistor (INCHANGE)
FJPF5021 - NPN Transistor (INCHANGE)
FJPF5027 - NPN Transistor (INCHANGE)

Other Datasheets by Fairchild Semiconductor

FJP5027 - High Voltage and High Reliability
FJP5555 - NPN Silicon Transistor
FJP13007 - High Voltage Fast-Switching NPN Power Transistor
FJP13009 - High-Voltage Fast-Switching NPN Power Transistor
FJP1943 - PNP Epitaxial Silicon Transistor
FJP1943OTU - PNP Epitaxial Silicon Transistor
FJP1943RTU - PNP Epitaxial Silicon Transistor
FJP2145 - NPN Power Transistor

Full PDF Text Transcription

Click to expand full text

FJP5304D — NPN Silicon Transistor FJP5304D NPN Silicon Transistor High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free Wheeling diodeSuitable for Electronic Ballast Application • Suitable for Electronic Ballast Application • Small Variance in Storage Time July 2008 Equivalent Circuit C B 1 TO-220 E 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current (DC) ICP * Collector Current (Pulse) IB Base Current (DC) IBP * Base Current (Pulse) PC Collector Dissipation (TC=25°C) TSTG Storage Temperature * Pulse Test Pulse Width = 5ms, Duty Cycle ≥ 1.

Published: Mar 30, 2005 |