FJPF5555
High Voltage Switch Mode Application
- Fast Speed Switching
- Wide Safe Operating Area
- Suitable for Electronic Ballast Application
TO-220F
1.Base
2.Collector
3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Value 1050 400 14 5 10 40 150
- 55 ~ 150 Units V V V A A W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol BVCBO BVCEO BVEBO h FE VCE(sat) VBE(sat) Cob t ON t STG t F t ON t STG t F Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage
- DC
Test Condition IC=500µA, IE=0 IC=5m A, IB=0 IE=500µA, IC=0 VCE=5V, IC=10m A VCE=3V, IC=0.8A IC=1A, IB=0.2A IC=3.5A, IB=1.0A IC=3.5A, IB=1.0A VCB=10V, f=1MHz VCC=125V, IC=0.5A...
