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FJPF9020 - PNP Epitaxial Darlington Transistor

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FJPF9020 FJPF9020 Monolithic Construction With Built In Base-Emitter Shunt Resistors • High Collector-Base Breakdown Voltage : BVCBO = -550V • High DC Current Gain : hFE = 550 @ VCE = -4V, IC = -1A (Typ.) • Industrial Use 1 TO-220F 2.Collector 3.Emitter 1.
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