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FJX2907A
FJX2907A
General Purpose Transistor
3
2
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCES VEBO IC PC TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature
SOT-323 1. Base 2. Emitter 3. Collector
1
Value -60 -60 -5 -600 325 150
Units V V V mA mW °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO hFE Parameter Collector-Base Breakdown Voltage * Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Test Condition IC= -10µA, IE=0 IC= -10mA, IB=0 IE= -10µA, IC=0 VCB= -50V, IE=0 VCE= -10V, IE= -0.1mA VCE= -10V, IC= -1.
FJX2907A Datasheet
