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FJY3009R NPN Epitaxial Silicon Transistor
November 2006
FJY3009R
NPN Epitaxial Silicon Transistor
Features
• Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=4.7KΩ) • Complement to FJY4009R
tm
Eqivalent Circuit
C
C
E
S09
B E
B
SOT - 523F
Absolute Maximum Ratings *
Symbol
VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
Ta = 25°C unless otherwise noted
Parameter
Value
40 40
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Units
V V V mA °C °C mW
5 100 -55~150 150 200
TSTG TJ
PC
Storage Temperature Range Junction Temperature
Collector Power Dissipation, by RθJA
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
FJY3009R Datasheet
