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FJY3009R - NPN Epitaxial Silicon Transistor

Key Features

  • Switching circuit, Inverter, Interface circuit, Driver Circuit.
  • Built in bias Resistor (R=4.7KΩ).
  • Complement to FJY4009R tm Eqivalent Circuit C C E S09 B E B SOT - 523F Absolute Maximum Ratings.
  • Symbol VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Ta = 25°C unless otherwise noted Parameter Value 40 40 www. DataSheet4U. com Units V V V mA °C °C mW 5 100 -55~150 150 200 TSTG TJ PC Storage Temp.

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FJY3009R NPN Epitaxial Silicon Transistor November 2006 FJY3009R NPN Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=4.7KΩ) • Complement to FJY4009R tm Eqivalent Circuit C C E S09 B E B SOT - 523F Absolute Maximum Ratings * Symbol VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Ta = 25°C unless otherwise noted Parameter Value 40 40 www.DataSheet4U.com Units V V V mA °C °C mW 5 100 -55~150 150 200 TSTG TJ PC Storage Temperature Range Junction Temperature Collector Power Dissipation, by RθJA * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.