FJY4011R - PNP Epitaxial Silicon Transistor

Features

Switching circuit, Inverter, Interface circuit, Driver Circuit.
Built in bias Resistor (R=22KΩ).
Complement to FJY3011R tm Eqivalent Circuit C C E S61 B E B SOT - 523F Absolute Maximum Ratings.
Symbol VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Ta = 25°C unless otherwise noted Parameter Value -40 -40 -5 -100 -55~150 150 200 Units V V V mA °C °C mW TSTG TJ PC Storage Temperature Range Junc.

Fairchild Semiconductor

Datasheet Details

Part number	FJY4011R
Manufacturer	Fairchild Semiconductor
File Size	284.14 KB
Description	PNP Epitaxial Silicon Transistor
Datasheet	FJY4011R Datasheet
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www.DataSheet4U.com FJY4011R PNP Epitaxial Silicon Transistor November 2006 FJY4011R PNP Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=22KΩ) • Complement to FJY3011R tm Eqivalent Circuit C C E S61 B E B SOT - 523F Absolute Maximum Ratings * Symbol VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Ta = 25°C unless otherwise noted Parameter Value -40 -40 -5 -100 -55~150 150 200 Units V V V mA °C °C mW TSTG TJ PC Storage Temperature Range Junction Temperature Collector Power Dissipation, by RθJA * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.

Published: Feb 22, 2007 |