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FLLD261 - HIGH CONDUCTANCE LOW LEAKAGE DIODE

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FLLD261 HIGH CONDUCTANCE LOW LEAKAGE DIODE PD . . . .350 mW @ TA = 25 Deg C BV . . . .200 V (MIN) @ IR = 5 uA ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature Operating Junction Temperature -55 to +150 Degrees C -55 to +150 Degrees C PACKAGE TO-236AB (Low) 3 P8A 1 2 CONNECTION DIAGRAMS 3 POWER DISSIPATION (NOTES 2 & 3) Total Device Dissipation at TA = 25 Deg C Derating Factor per Degree C 350 mW 2.8 mW 1 2 VOLTAGES & CURRENTS WIV Working Inverse Voltage IO Average Rectified Current IF DC Forward Current if Recurrent Peak Forward Current if (surge) Peak Forward Surge Current Pulse width = 1 second Pulse width = 1 microsec 100 V 250 mA 600 mA 700 mA 1.0 A 3.
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