FMC6G50US60 Datasheet | Fairchild Semiconductor

Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature . Features - - - - - - - UL Certified No. E209204 Short circuit rated 10us @ TC = 100°C, VGE = 15V High speed switching Low saturation voltage : VCE(sat) = 2.2 V @ IC = 50A High input impedance Built in 3 phase rectifier circuit Fast & soft anti-parallel FWD R EU S U V W T EV EW Package Code : 21PM-BA P P1 Applications - - - - AC & DC motor controls General purpose inverters Robotics Servo controls GU N B GW E Internal Circuit Diagram Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM PD TSC VRRM IO IFSM I2t TJ mon TSTG VISO Mounting Torque TC = 25°C unless otherwise noted Inverter Converter Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC = 25°C Pulsed Collector Current Diode Continuous Forward Current @ TC = 100°C Diode Maximum Forward Current Maximum Power Dissipation @ TC = 25°C Short Circuit Withstand Time @ TC = 100°C Repetitive Peak Reverse Voltage Average Output Rectified Current Surge Forward Current @ 1Cycle at 60Hz, Peak value Non-Repetitive 1 Cycle Surge Current Operating Junction Temperature Storage Temperature Range Isolation Voltage Mounting part Screw @ AC 1minute @ M4 FMC7G50US60 600 ± 20 50 100 50 100 200 10 1200 50 500 1025 -40 to +150 -40 to +125 2500 1.25 Units V V A A A A W us V A A A2s °C °C V N.m Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature ©2001 Fairchild Semiconductor Corporation FMC6G50US60 Rev. A3 Electrical Characteristics of the IGBT @ Inverter T Symbol Parameter = 25°C unless otherwise noted Test Conditions Min. Typ....