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FMC7G30US60 - Compact & Complex Module

Description

Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness.

Features

  • UL Certified No. E209204 Short circuit rated 10us @ TC = 100°C, VGE = 15V High speed switching Low saturation voltage : VCE(sat) = 2.2 V @ IC = 30A High input impedance Built in brake and 3 phase rectifier circuit Fast & soft anti-parallel FWD R B S U T V W EU EV EW Package Code : 21PM-BA P P1 GU GV GW.

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Datasheet preview – FMC7G30US60

Datasheet Details

Part number FMC7G30US60
Manufacturer Fairchild Semiconductor
File Size 662.73 KB
Description Compact & Complex Module
Datasheet download datasheet FMC7G30US60 Datasheet
Additional preview pages of the FMC7G30US60 datasheet.

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Full PDF Text Transcription

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FMC7G30US60 October 2001 IGBT FMC7G30US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. Features • • • • • • • UL Certified No. E209204 Short circuit rated 10us @ TC = 100°C, VGE = 15V High speed switching Low saturation voltage : VCE(sat) = 2.
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