FOD3120 Datasheet | Fairchild Semiconductor

Features - High Noise Immunity Characterized by 35 k V/μs Minimum mon Mode Rejection - 2.5 A Peak Output Current Driving Capability for Most 1200 V/20 A IGBT - Use of P-channel MOSFETs at Output Stage Enables Output Voltage Swing Close to The Supply Rail - Wide Supply Voltage Range from 15 V to 30 V - Fast Switching Speed - 400 ns max. Propagation Delay - 100 ns max. Pulse Width Distortion - Under Voltage Lock Out (UVLO) with Hysteresis - Extended Industrial Temperate Range, -40°C to 100°C Temperature Range - Safety and Regulatory Approved - UL1577, 5000 VRMS for 1 min. - DIN EN/IEC60747-5-5 - RDS(ON) of 1 Ω (typ.) Offers Lower Power Dissipation - >8.0 mm Clearance and Creepage Distance (Option ‘T’ or ‘TS’) - 1,414 V Peak Working Insulation Voltage (VIORM) Applications - Industrial Inverter - Uninterruptible Power Supply - Induction Heating - Isolated IGBT/Power MOSFET Gate Drive Description The FOD3120 is a 2.5 A Output Current Gate Drive Optocoupler, capable of driving most medium power IGBT/MOSFET. It is ideally suited for fast switching driving of power IGBT and MOSFETs used in motor control inverter applications, and high performance power system. It utilizes Fairchild’s coplanar packaging technology, Optoplanar®, and optimized IC design to achieve high noise immunity, characterized by high mon mode rejection. It consists of a gallium aluminum arsenide (Al Ga As) light emitting diode optically coupled to an integrated circuit with a high-speed driver for push-pull MOSFET output stage. Related Resources - FOD3150, 1 A Output Current, Gate Drive Optocoupler Datasheet - .fairchildsemi./products/optoelectronics/ Functional Block Diagram Package Outlines NC 1 ANODE 2 CATHODE 3 V DD 7 VO2 6 VO1 NC 4 5V SS Figure 1. Functional Block Diagram(1) Note:...