Description
The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package.
Features
- AC Input Response (FOD814).
- Current Transfer Ratio in Selected Groups:
FOD814: 20.
- 300% FOD817: 50.
- 600% FOD814A: 50.
- 150% FOD817A: 80.
- 160%
FOD817B: 130.
- 260% FOD817C: 200.
- 400% FOD817D: 300.
- 600%.
- Minimum BVCEO of 70 V Guaranteed.
- Safety and Regulatory Approvals.
- UL1577, 5,000 VACRMS for 1 Minute.
- DIN EN/IEC60747-5-5.
FOD817A Datasheet
