FOD817B Overview
The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. Functional Block Diagram ANODE, CATHODE 1 CATHODE, ANODE 2 FOD814 4 COLLECTOR ANODE 1 3 EMITTER CATHODE...
FOD817B Key Features
- AC Input Response (FOD814)
- Current Transfer Ratio in Selected Groups
- Minimum BVCEO of 70 V Guaranteed
- Safety and Regulatory Approvals
- UL1577, 5,000 VACRMS for 1 Minute
- DIN EN/IEC60747-5-5
