FOD8384 Datasheet | Fairchild Semiconductor

Features - Reliable and High-Voltage Insulation with Greater than 8 mm Creepage and Clearance Distance and 0.5 mm Internal Insulation Distance - 2.5 A Output Current Driving Capability for Medium Power IGBT/MOSFET - P-Channel MOSFET at Output Stage Enables Output Voltage Swing Close to Supply Rail - 35 k V/µs Minimum mon Mode Rejection - Wide Supply Voltage Range: 15 V to 30 V - Fast Switching Speed Over Full Operating Temperature Range - 210 ns Maximum Propagation Delay - 65 ns Maximum Pulse-Width Distortion - Under-Voltage Lockout (UVLO) with Hysteresis - Extended Industrial Temperate Range: -40°C to 100°C - Safety and Regulatory Approvals: - UL1577, 5,000 VACRMS for 1 Minute - DIN-EN/IEC60747-5-5, 1,414 V Peak Working Insulation Voltage Applications - AC and Brushless DC Motor Drives - Industrial Inverter - Uninterruptible Power Supply - Induction Heating - Isolated IGBT/Power MOSFET Gate Drive Related Resources - FOD3184- 3 A Output Current, High-Speed MOSFET/IGBT Gate Drive Optocoupler Datasheet - .fairchildsemi./products/opto/ Description The FOD8384 is a 2.5 A output current gate drive optocoupler capable of driving medium-power IGBT/ MOSFETs. It is ideally suited for fast-switching driving of power IGBT and MOSFET used in motor-control inverter applications and high-performance power systems. The FOD8384 utilizes Fairchild’s Optoplanar® coplanar packaging technology and optimized IC design to achieve reliable high-insulation voltage and high-noise immunity. It consists of an Aluminum Gallium Arsenide (Al Ga As) Light-Emitting Diode (LED) optically coupled to an integrated circuit with a high-speed driver for push-pull MOSFET output stage. The device is housed in a wide body, 5-pin, small-outline, plastic package. Functional Schematic ANODE 1 CATHODE 3 6 VDD 5 VO 4 VSS Figure 1. Schematic ©2014 Fairchild Semiconductor Corporation FOD8384 Rev. 1.0.0 Figure 2. Package Outline .fairchildsemi. - 2.5 A Output Current, High-Speed, MOSFET/IGBT Gate Drive...