FPE500 Datasheet | Fairchild Semiconductor

Description The FPE5OO/FPE510 are Ga As infrared-emitting diodes. When forward-biased, they emit an intense, narrow band of radiation peaking at approximately 900 nm (non-visible). The devices are packaged in TO-18 style hermetically-sealed packages with a glass lens. These solid-state lamps are ideally suited for use in conjunction with silicon photosensors, since their spectral peaks are closely matched. The FPE5001 FPE510 use a Planar process and are especially designed for high reliability and long life. High Reliability Long Life Ideally Suited For Use In Conjunction With Silicon Photosensors Applications Include: Punched Card And Paper Tape Reading, Optical Shaft Encoders, Choppers, High-Speed High-Voltage Isolation Switches and High-Speed Optoelectronic Signal Links Hermetic Metal Package For Stability And Reliability Absolute Maximum Ratings Maximum Temperatures and Humidity Storage Temperature -65°C to +200°C Operating Temperature -65°C to +125°C Pin Temperature (Soldering, 5 s) 260°C Relative Humidity at 65°C 85% Maximum Power Distribution Power Dissipation Derate Linearly from 25°C 250m W 2.5 m W/o C Maximum Voltages and Currents VR Reverse Voltage 3.0 V IF Forward dc Current 150 m A Package Outlines FPE500 :~~~ l:ml---H~r-:::-=-::;~-~l-=--=--=--=-~- :~~~Dl~~6~l .030 (0.762) MAX Seating t Plan-- --t- .210 (5.334) t.170 (4.318) .065 (1.651) .035 (0.889) 2PINS- ~ .019 (0.483) .016 (0.406) ~.50y~.700) .100 (2.540) T.P. PIN NO.2 CATHODE 1-) (1.16~L.048 450~, .046 GLASS (1.219) .036 (0.914) .028...