FPN630
FPN630 / FPN630A
FPN630 FPN630A
TO-226
PNP Low Saturation Transistor
These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process PC.
Absolute Maximum Ratings-
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current
- Continuous Collector-Emitter Voltage
TA = 25°C unless otherwise noted
Parameter
Value
30 35 5.0 3.0 -55 to +150
Units
V V V A °C
Operating and Storage Junction Temperature Range
- These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
Symbol
PD RθJC RθJA
TA = 25°C...
