FPN660 - PNP Low Saturation Transistor

Fairchild Semiconductor

Datasheet Details

Part number	FPN660
Manufacturer	Fairchild Semiconductor
File Size	57.30 KB
Description	PNP Low Saturation Transistor
Datasheet	FPN660 Datasheet
Additional preview pages of the FPN660 datasheet.

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Full PDF Text Transcription

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FPN660/FPN660A FPN660/FPN660A PNP Low Saturation Transistor • These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0A continuous. • Sourced from process PA. C BE TO-226 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range FPN660 60 80 5 3 -55 ~ +150 FPN660A 60 60 5 3 -55 ~ +150 Units V V V A °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits.

Published: Apr 1, 2005 |