FPNH10
TO-92
NPN RF Transistor
This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 m A range in mon emitter or mon base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.
Absolute Maximum Ratings-
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
- Continuous
TA = 25°C unless otherwise noted
Parameter
Value
25 30 3.0 50 -55 to +150
Units
V V V m A °C
Operating and Storage Junction Temperature Range
- These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RθJC RθJA
TA = 25°C unless...
