FQA10N80C_F109
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
Key Features
- 10 A, 800 V, RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5 A
- Low Gate Charge (Typ. 44 nC)
- Low Crss (Typ. 15 pF)
- 100% Avalanche Tested
- RoHS compliant March 2014
