FQA28N15 Description
Features This N-Channel enhancement mode power MOSFET is 33 A, 150 V, RDS(on) = 90 mΩ (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET ID = 16.5 A technology has been especially tailored to reduce on-state Low Gate Charge (Typ. 0 nC) resistance, and to provide superior switching performance and Low Crss (Typ.
FQA28N15 Key Features
- 33 A, 150 V, RDS(on) = 90 mΩ (Max.) @ VGS = 10 V
- Low Gate Charge (Typ. 0 nC)
- Low Crss (Typ. 110 pF) high avalanche energy strength. These devices are suitable
- 100% Avalanche Tested