Datasheet4U Logo Datasheet4U.com

FQA28N15 - 150V N-Channel MOSFET

Key Features

  • This N-Channel enhancement mode power MOSFET is.
  • 33 A, 150 V, RDS(on) = 90 mΩ (Max. ) @ VGS = 10 V, produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET ID = 16.5 A technology has been especially tailored to reduce on-state.
  • Low Gate Charge (Typ. 0 nC) resistance, and to provide superior switching performance and.
  • Low Crss (Typ. 110 pF) high avalanche energy strength. These devices are suitable for switched m.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FQA28N50F N-Channel MOSFET INCHANGE
FQA24N50F N-Channel MOSFET INCHANGE
FQA24N60 N-Channel MOSFET ON Semiconductor
FQA020ADC-007-M EMC Filters TDK-Lambda
FQA020ADC-007-S EMC Filters TDK-Lambda

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FQA28N50 500V N-Channel MOSFET
FQA28N50F 500V N-Channel MOSFET
FQA20N40 400V N-Channel MOSFET
FQA22N30 300V N-Channel MOSFET
FQA22P10 100V P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FQA28N15 — N-Channel QFET® MOSFET FQA28N15 N-Channel QFET® MOSFET 150 V, 33 A, 90 mΩ June 2014 Description Features This N-Channel enhancement mode power MOSFET is • 33 A, 150 V, RDS(on) = 90 mΩ (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET ID = 16.5 A technology has been especially tailored to reduce on-state • Low Gate Charge (Typ. 0 nC) resistance, and to provide superior switching performance and • Low Crss (Typ. 110 pF) high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor • 100% Avalanche Tested control, and variable switching power applications.