FQA28N15
Description
Features
This N-Channel enhancement mode power MOSFET is
- 33 A, 150 V, RDS(on) = 90 mΩ (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET
ID = 16.5 A technology has been especially tailored to reduce on-state
- Low Gate Charge (Typ. 0 n C) resistance, and to provide superior switching performance and
- Low Crss (Typ. 110 p F) high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor
- 100% Avalanche Tested control, and variable switching power applications.
- 175°C Maximum Junction Temperature Rating
G DS
TO-3PN
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche...
