Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
Features
- 70 A, 100 V, RDS(on) = 28 mΩ (Max)@VGS = 10 V, ID = 35 A.
- Low Gate Charge (Typ. 135 nC).
- Low Crss (Typ.135 pF).
- 100% Avalanche Tested.
- 175°C Maximum Junction Temperature Rating
D
G DS
TO-3PN
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Curent - Pulsed
(Note 1)
Gate.
FQA70N15 Datasheet
