Datasheet Summary
FQA7N65C 650V N-Channel MOSFET
650V N-Channel MOSFET
Features
- 7A, 650V, RDS(on) = 1.4Ω @VGS = 10 V
- Low gate charge ( typical 28 nC)
- Low Crss ( typical 12 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
February 2006
QFET ®
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power supplies,...