FQA8N100C Datasheet | Fairchild Semiconductor

Features - RDS(on) = 1.45 Ω (Max.) @ VGS = 10 V, ID = 4 A - Low Gate Charge (Typ. 53 n C) - Low Crss (Typ. 16 p F) - 100% Avalanche Tested March 2014 Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power supplies. TO-3PN Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source voltage Single Pulsed Avalanche...