FQA90N08 Overview
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
Key Features
- 90 A, 80 V, RDS(on) = 16 mΩ (Max) @VGS = 10 V, ID = 45 A
- Low Gate Charge (Typ. 84 nC)
- Low Crss (Typ. 200 pF)
- 100% Avalanche Tested
- 175°C Maximum Junction Temperature Rating D G D S TO-3PN G S
