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FQAF10N80 Datasheet 800v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQAF10N80 QFET FQAF10N80 800V N-Channel MOSFET General.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficiency switch mode power supply.

Key Features

  • 6.7A, 800V, RDS(on) = 1.05Ω @VGS = 10 V Low gate charge ( typical 55 nC) Low Crss ( typical 24 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !.
  • ◀ ▲.
  • G! G D S TO-3PF FQAF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C).

More Datasheets from Fairchild (now onsemi)

Part Number Description
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FQAF11N90 900V N-Channel MOSFET
FQAF11N90C MOSFET
FQAF12N60 600V N-Channel MOSFET
FQAF12P20 200V P-Channel MOSFET
FQAF13N50 500V N-Channel MOSFET
FQAF13N80 800V N-Channel MOSFET
FQAF14N30 300V N-Channel MOSFET
FQAF15N70 700V N-Channel MOSFET
FQAF16N25 250V N-Channel MOSFET

FQAF10N80 Distributor