FQAF16N25C
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Key Features
- 11.4A, 250V, RDS(on) = 0.27Ω @VGS = 10 V
- Low gate charge ( typical 41 nC)
- Low Crss ( typical 68 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability G DS TO-3PF FQAF Series D { G{
