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FQAF16N25C - 250V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 11.4A, 250V, RDS(on) = 0.27Ω @VGS = 10 V.
  • Low gate charge ( typical 41 nC).
  • Low Crss ( typical 68 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability G DS TO-3PF FQAF Series D { G{.
  • ◀▲.
  • { S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C).

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FQAF16N25C FQAF16N25C 250V N-Channel MOSFET QFET ® General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls. Features • 11.4A, 250V, RDS(on) = 0.
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