FQAF7N90 Datasheet | Fairchild Semiconductor

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supplies.. Features - - - - - - 5.2A, 900V, RDS(on) = 1.55Ω @VGS = 10 V Low gate charge ( typical 45 n C) Low Crss ( typical 20 p F) Fast switching 100% avalanche tested Improved dv/dt capability ! - ◀ ▲ - - G! G D S TO-3PF FQAF Series ! Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQAF7N90 900 5.2 3.3 20.8 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V m J A m J V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) 830 5.2 10.7 4.0 107 0.85 -55 to +150 300 - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ --Max 1.17 40 Units °C/W °C/W ©2001 Fairchild Semiconductor Corporation Rev. A, March 2001 Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test...