FQB11P06 - 60V P-Channel MOSFET

Product Overview

Fairchild Semiconductor

Part number	FQB11P06
Manufacturer	Fairchild Semiconductor
File Size	940.71 KB
Description	60V P-Channel MOSFET
Datasheet	FQB11P06 Datasheet
Additional preview pages of the FQB11P06 datasheet.

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

-11.4 A, -60 V, RDS(on) = 175 mΩ (Max. ) @ VGS = -10 V, ID = -5.7 A.
Low Gate Charge (Typ. 13 nC).
Low Crss (Typ. 45 pF).
100% Avalanche Tested.
175°C Maximum Junction Temperature Rating S D G G S D2-PAK D Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Ga.

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Published: Apr 1, 2005 |