FQB12N50 - 500V N-Channel MOSFET

Product Overview

Fairchild Semiconductor

Part number	FQB12N50
Manufacturer	Fairchild Semiconductor
File Size	617.23 KB
Description	500V N-Channel MOSFET
Datasheet	FQB12N50 Datasheet
Additional preview pages of the FQB12N50 datasheet.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

12.1A, 500V, RDS(on) = 0.49Ω @VGS = 10 V Low gate charge ( typical 39 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !.
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G! G S D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuou.

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Published: Apr 1, 2005 |