Datasheet4U Logo Datasheet4U.com

FQB12N60 Datasheet 600v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQB12N60 / FQI12N60 April 2000 QFET FQB12N60 / FQI12N60 600V N-Channel.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficiency switch mode power supply.

Key Features

  • 10.5A, 600V, RDS(on) = 0.7 Ω @ VGS = 10 V Low gate charge ( typical 42 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC =.

More Datasheets from Fairchild (now onsemi)

Part Number Description
FQB12N20 200V N-Channel MOSFET
FQB12N20L 200V LOGIC N-Channel MOSFET
FQB12N50 500V N-Channel MOSFET
FQB12P10 100V P-Channel MOSFET
FQB12P20 200V P-Channel MOSFET
FQB10N20 200V N-Channel MOSFET
FQB10N20C 200V N-Channel MOSFET
FQB10N20L 200V LOGIC N-Channel MOSFET
FQB10N50CF N-Channel MOSFET
FQB10N60C 600V N-Channel MOSFET

FQB12N60 Distributor