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FQB12P20 Datasheet 200v P-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQB12P20 / FQI12P20 May 2000 QFET FQB12P20 / FQI12P20 200V P-Channel.

General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficiency switching DC/DC converters.

Key Features

  • -11.5A, -200V, RDS(on) = 0.47Ω @VGS = -10 V Low gate charge ( typical 31 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability D S !.
  • G! G S ▶ ▲.
  • D2-PAK FQB Series G D S I2-PAK FQI Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continu.

More Datasheets from Fairchild (now onsemi)

Part Number Description
FQB12P10 100V P-Channel MOSFET
FQB12N20 200V N-Channel MOSFET
FQB12N20L 200V LOGIC N-Channel MOSFET
FQB12N50 500V N-Channel MOSFET
FQB12N60 600V N-Channel MOSFET
FQB10N20 200V N-Channel MOSFET
FQB10N20C 200V N-Channel MOSFET
FQB10N20L 200V LOGIC N-Channel MOSFET
FQB10N50CF N-Channel MOSFET
FQB10N60C 600V N-Channel MOSFET

FQB12P20 Distributor