FQB13N50C
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Features
- 13A, 500V, RDS(on) = 0.48Ω @VGS = 10 V
- Low gate charge ( typical 43n C)
- Low Crss ( typical 20p F)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Ro HS pliant
D2-PAK
FQB Series
I2-PAK
FQI Series
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Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC =...
