Datasheet4U Logo Datasheet4U.com

FQB17N08L - 80V LOGIC N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 16.5A, 80V, RDS(on) = 0.1Ω @VGS = 10 V Low gate charge ( typical 8.8 nC) Low Crss ( typical 29 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating Low level gate drive requirements allowing direct operation from logic drives D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR.

📥 Download Datasheet

Datasheet preview – FQB17N08L

Datasheet Details

Part number FQB17N08L
Manufacturer Fairchild Semiconductor
File Size 571.43 KB
Description 80V LOGIC N-Channel MOSFET
Datasheet download datasheet FQB17N08L Datasheet
Additional preview pages of the FQB17N08L datasheet.

📁 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FQB17N08L / FQI17N08L December 2000 QFET FQB17N08L / FQI17N08L 80V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control. D TM Features • • • • • • • • 16.5A, 80V, RDS(on) = 0.1Ω @VGS = 10 V Low gate charge ( typical 8.
Published: |