FQB1P50 Datasheet 500v P-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQB1P50 / FQI1P50 December 2000 QFET FQB1P50 / FQI1P50 500V P-Channel.

Datasheet Details

Part number	FQB1P50
Manufacturer	Fairchild (now onsemi)
File Size	571.43 KB
Description	500V P-Channel MOSFET
Datasheet	FQB1P50_FairchildSemiconductor.pdf

General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes.

These devices are well suited for electronic lamp ballasts based on the complementary half bridge topology.

Key Features

-1.5A, -500V, RDS(on) = 10.5Ω @VGS = -10 V Low gate charge ( typical 11 nC) Low Crss ( typical 6.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D S !.
G! G S ▶ ▲.
D2-PAK FQB Series G D S I2-PAK FQI Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continu.

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