Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
Features
- 31 A, 200 V, RDS(on) = 75 mΩ (max. ) @ VGS = 10 V, ID = 15.5 A.
- Low Gate Charge (Typ. 55 nC).
- Low Crss (Typ. 52 pF).
- 100% Avalanche Tested.
- Low level gate drive requirement allowing direct
opration from logic drivers.
- RoHS Compliant
D D
G S
D2-PAK
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C).
FQB34N20L Datasheet
