Datasheet Details
| Part number | FQB34N20L |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 739.84 KB |
| Description | 200V N-Channel MOSFET |
| Datasheet |
 FQB34N20L Datasheet
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General Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
Key Features
- 31 A, 200 V, RDS(on) = 75 mΩ (max. ) @ VGS = 10 V, ID = 15.5 A.
- Low Gate Charge (Typ. 55 nC).
- Low Crss (Typ. 52 pF).
- 100% Avalanche Tested.
- Low level gate drive requirement allowing direct opration from logic drivers.
- RoHS Compliant D D G S D2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C).