FQB34N20L Datasheet 200v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQB34N20L — N-Channel QFET® MOSFET FQB34N20L N-Channel QFET® MOSFET 200 V, 31 A, 75 mΩ October.

Datasheet Details

Part number	FQB34N20L
Manufacturer	Fairchild (now onsemi)
File Size	739.84 KB
Description	200V N-Channel MOSFET
Datasheet	FQB34N20L_FairchildSemiconductor.pdf

General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.

These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Key Features

31 A, 200 V, RDS(on) = 75 mΩ (max. ) @ VGS = 10 V, ID = 15.5 A.
Low Gate Charge (Typ. 55 nC).
Low Crss (Typ. 52 pF).
100% Avalanche Tested.
Low level gate drive requirement allowing direct opration from logic drivers.
RoHS Compliant D D G S D2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C).

FQB34N20L Distributor

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