FQB3N60C Datasheet | Fairchild Semiconductor

Features - 3A, 600V, RDS(on) = 3.4Ω @ VGS = 10 V - Low gate charge ( typical 10.5 n C) - Low Crss ( typical 5 p F) - Fast switching - 100% avalanche tested - Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D2-PAK FQB Series Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) 600 3 1.8 12 ±30 150 3 7.5 4.5 75 0.62 -55 to +150 300 Unit V A A A V m J A m J V/ns W W/°C °C °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθJA- RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient- Thermal Resistance, Junction-to-Ambient Typ. ---- Max. 1.67 40 62.5 Unit °C/W °C/W...