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FQB3N60C - 600V N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 3A, 600V, RDS(on) = 3.4Ω @ VGS = 10 V.
  • Low gate charge ( typical 10.5 nC).
  • Low Crss ( typical 5 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability TM.

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Datasheet Details

Part number FQB3N60C
Manufacturer Fairchild Semiconductor
File Size 872.93 KB
Description 600V N-Channel MOSFET
Datasheet download datasheet FQB3N60C Datasheet
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FQB3N60C 600V N-Channel MOSFET May 2006 QFET FQB3N60C 600V N-Channel MOSFET Features • 3A, 600V, RDS(on) = 3.4Ω @ VGS = 10 V • Low gate charge ( typical 10.5 nC) • Low Crss ( typical 5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
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