FQB3P20 - 200V P-Channel MOSFET

Product Overview

Fairchild Semiconductor

Part number	FQB3P20
Manufacturer	Fairchild Semiconductor
File Size	560.92 KB
Description	200V P-Channel MOSFET
Datasheet	FQB3P20 Datasheet
Additional preview pages of the FQB3P20 datasheet.

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

-2.8A, -200V, RDS(on) = 2.7Ω @VGS = -10 V Low gate charge ( typical 6.0 nC) Low Crss ( typical 7.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D S ! G! G S D2-PAK FQB Series G D S I2-PAK FQI Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC =.

📁 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: Apr 1, 2005 |