FQB5N20L Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation modes. These devices are well suited for high efficiency switching DC/DC converters, switch mode...
FQB5N20L Key Features
- 4.5A, 200V, RDS(on) = 1.2Ω @VGS = 10 V Low gate charge ( typical 4.8 nC) Low Crss ( typical 6.0 pF) Fast switching 100%