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FQB5P20 - 200V P-Channel MOSFET

Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • -4.8A, -200V, RDS(on) = 1.4Ω @VGS = -10 V Low gate charge ( typical 10 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested D G! G S !.
  • ▶ ▲.
  • S D2-PAK FQB Series G D S I2-PAK FQI Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulse.

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Full PDF Text Transcription

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FQB5P20 / FQI5P20 May 2000 QFET FQB5P20 / FQI5P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters. TM Features • • • • • -4.8A, -200V, RDS(on) = 1.
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