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FQB60N03L - N-Channel Logic Level PWM Optimized Power MOSFET

Description

This device employs a new advanced MOSFET technology and

Features

  • low gate charge while maintaining low onresistance. Optimized for switching.

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FQB60N03L October 2002 FQB60N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description This device employs a new advanced MOSFET technology and features low gate charge while maintaining low onresistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features • Fast switching • rDS(ON) = 0.010Ω (Typ), VGS = 10V • rDS(ON) = 0.017Ω (Typ), VGS = 5V • Qg (Typ) = 13nC, VGS = 5V • Qgd (Typ) = 4.
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