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FQB60N03L
October 2002
FQB60N03L
N-Channel Logic Level PWM Optimized Power MOSFET
General Description
This device employs a new advanced MOSFET technology and features low gate charge while maintaining low onresistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Features
• Fast switching • rDS(ON) = 0.010Ω (Typ), VGS = 10V • rDS(ON) = 0.017Ω (Typ), VGS = 5V • Qg (Typ) = 13nC, VGS = 5V • Qgd (Typ) = 4.